Patent attributes
A CMOS compatible heterogeneously integrated material platform for photonic integrated circuitry is invented. The material platform has SiO2 as cladding material, at least a bottom layer made of moderate refractive index (contrast) material(s), a bonded single crystal Si layer transfer from either a SOI wafer or a ion implanted single crystal Si wafer ready for ion cut split on top of the bottom layer, and some devices enabling light coupling between the devices made within these two layers. The invention provides a great material platform to offer a full set of photonic building blocks for all sorts of different applications such as photonic circuitry for optical neural network, quantum computing, telecommunication, data communication, optical switching, optical sensing, passive and/or active Si optical interposer with its size even bigger than lithography step field.
