Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 16, 2021
Patent Application Number
16572679
Date Filed
September 17, 2019
Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.
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