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US Patent 10950731 Inner spacers for gate-all-around semiconductor devices
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Patent
Date Filed
September 17, 2019
Date of Patent
March 16, 2021
Patent Application Number
16572679
Patent Citations
US Patent 10700064 Multi-threshold voltage gate-all-around field-effect transistor devices with common gates
US Patent 10818777 Method of manufacturing a semiconductor device and a semiconductor device
Patent Citations Received
US Patent 12125915 Source/drain features of multi-gate devices
0
US Patent 11437490 Methods of forming a replacement gate structure for a transistor device
US Patent 11916105 Semiconductor device with corner isolation protection and methods of forming the same
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10950731
Patent Primary Examiner
George R Fourson, III
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