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US Patent 10977405 Fill process optimization using feature scale modeling

Patent 10977405 was granted and assigned to Lam Research on April, 2021 by the United States Patent and Trademark Office.

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Is a
Patent
Patent

Patent attributes

Patent Applicant
Lam Research
Lam Research
Current Assignee
Lam Research
Lam Research
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10977405
Date of Patent
April 13, 2021
Patent Application Number
16260870
Date Filed
January 29, 2019
Patent Citations
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US Patent 10585347 Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
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US Patent 10572697 Method of etch model calibration using optical scatterometry
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US Patent 10032681 Etch metric sensitivity for endpoint detection
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US Patent 10197908 Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
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US Patent 10303830 Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
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US Patent 10386828 Methods and apparatuses for etch profile matching by surface kinetic model optimization
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US Patent 10534257 Layout pattern proximity correction through edge placement error prediction
Patent Citations Received
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US Patent 11921433 Optical metrology in machine learning to characterize features
0
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US Patent 11624981 Resist and etch modeling
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US Patent 11704463 Method of etch model calibration using optical scatterometry
0
Patent Primary Examiner
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Brian Ngo
Patent abstract

Provided herein are systems and methods for optimizing feature fill processes. The feature fill optimization systems and methods may be used to optimize feature fill from a small number of patterned wafer tests. The systems and methods may be used for optimizing enhanced feature fill processes including those that include inhibition and/or etch operations along with deposition operations. Results from experiments may be used to calibrate a feature scale behavioral model. Once calibrated, parameter space may be iteratively explored to optimize the process.

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