Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Peng-Wei Chu0
Sung-Li Wang0
Yasutoshi Okuno0
Date of Patent
April 13, 2021
0Patent Application Number
163542590
Date Filed
March 15, 2019
0Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.
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