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US Patent 10978354 Selective dual silicide formation

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
March 15, 2019
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Date of Patent
April 13, 2021
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Patent Application Number
16354259
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Patent Citations
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US Patent 10573752 Semiconductor device manufacturing method including doping from a diffused layer
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US Patent 10566246 Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices
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US Patent 10079210 Integrated circuit device and method of fabricating the same
Patent Citations Received
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US Patent 11374101 Dual metal wrap-around contacts for semiconductor devices
Patent Inventor Names
Peng-Wei Chu
0
Sung-Li Wang
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Yasutoshi Okuno
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10978354
0
Patent Primary Examiner
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Christine A Enad
0

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