US Patent 10985278 Method for manufacturing semiconductor device
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Patent abstract
An insulator is formed over a substrate, an opening is formed in the insulator, and an oxide semiconductor is formed in the opening. Then, part of the insulator is removed to expose a side surface of the oxide semiconductor.
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Patent Jurisdiction
Patent Number
109852780
Date of Patent
April 20, 2021
0Patent Application Number
152111600
Date Filed
July 15, 2016
0Official Website
Patent Citations
Patent Primary Examiner
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Infobox
Is a
Patent Jurisdiction
Patent Number
109852780
Date of Patent
April 20, 2021
0Patent Application Number
152111600
Date Filed
July 15, 2016
0Official Website
Patent Citations
Patent Primary Examiner
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Golden AI
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US Patent 10985278 Method for manufacturing semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
10985278
Date of patent
April 20, 2021
Patent application number
15211160
Date Filed
July 15, 2016
Patent citations
Patent primary examiner
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