Patent 10991426 was granted and assigned to Taiwan Semiconductor Manufacturing Company on April, 2021 by the United States Patent and Trademark Office.
A memory device includes a memory array including a plurality of memory cells arranged in rows and columns. A closed loop bias generator is configured to output a column select signal to the memory array. A current limiter receives an output of the closed loop bias generator. The current limiter is coupled to a plurality of the columns of the memory array.