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US Patent 11004861 Three-dimensional memory devices and fabrication methods thereof
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Patent
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Date Filed
August 14, 2019
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Date of Patent
May 11, 2021
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Patent Application Number
16541144
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Patent Citations
US Patent 10741576 Three-dimensional memory device containing drain-select-level air gap and methods of making the same
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US Patent 10700090 Three-dimensional flat NAND memory device having curved memory elements and methods of making the same
Patent Citations Received
US Patent 11943923 Three-dimensional memory devices and fabrication methods thereof
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US Patent 11502102 Three-dimensional memory devices and fabrication methods thereof
US Patent 11581332 Three-dimensional memory devices and fabrication methods thereof
US Patent 11665903 Three-dimensional memory devices and fabrication methods thereof
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US Patent 11462565 Three-dimensional memory devices and fabrication methods thereof
Patent Inventor Names
Li Hong Xiao
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11004861
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Patent Primary Examiner
Vu A Vu
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