Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hsing-Lien Lin0
Chin-Wei Liang0
Fa-Shen Jiang0
Hai-Dang Trinh0
Date of Patent
June 1, 2021
0Patent Application Number
167501450
Date Filed
January 23, 2020
0Patent Citations
Patent Primary Examiner
Patent abstract
Various embodiments of the present disclosure are directed towards a memory cell. The memory cell includes a bottom electrode overlying a substrate. A data storage structure overlies the bottom electrode. A top electrode overlies the data storage structure. Sidewalls of the top electrode and sidewall of the bottom electrode are aligned. Further, a getter layer abuts the bottom electrode.
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