Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 22, 2021
Patent Application Number
16933100
Date Filed
July 20, 2020
Patent Citations
Patent Primary Examiner
Patent abstract
A method for manufacturing a semiconductor device includes forming a semiconductor fin on a substrate. A dummy gate structure is formed crossing the semiconductor fin. The dummy gate structure is replaced with a metal gate structure. An epitaxial structure is formed in the semiconductor fin after replacing the dummy gate structure with the metal gate structure.
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