US Patent 11043579 Method for manufacturing semiconductor device
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Patent abstract
A method for manufacturing a semiconductor device includes forming a semiconductor fin on a substrate. A dummy gate structure is formed crossing the semiconductor fin. The dummy gate structure is replaced with a metal gate structure. An epitaxial structure is formed in the semiconductor fin after replacing the dummy gate structure with the metal gate structure.
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Patent Jurisdiction
Patent Number
110435790
Date of Patent
June 22, 2021
0Patent Application Number
169331000
Date Filed
July 20, 2020
0Official Website
Patent Citations
Patent Primary Examiner
Edits on 26 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
110435790
Date of Patent
June 22, 2021
0Patent Application Number
169331000
Date Filed
July 20, 2020
0Official Website
Patent Citations
Patent Primary Examiner
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US Patent 11043579 Method for manufacturing semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
11043579
Date of patent
June 22, 2021
Patent application number
16933100
Date Filed
July 20, 2020
Patent citations
Patent primary examiner
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