Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 13, 2021
Patent Application Number
15996539
Date Filed
June 4, 2018
Patent Citations
Patent Primary Examiner
Patent abstract
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.
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