US Patent 11107859 Memory cell with unipolar selectors
Patent 11107859 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2021 by the United States Patent and Trademark Office.
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In some embodiments, the present disclosure relates to an integrated circuit. The integrated circuit has a magnetic tunnel junction (MTJ) device disposed within a dielectric structure over a substrate. The MTJ device has a MTJ disposed between a first electrode and a second electrode. A first unipolar selector is disposed within the dielectric structure and is coupled to the first electrode. The first unipolar selector is configured to allow current to flow through the MTJ device along a first direction. A second unipolar selector is disposed within the dielectric structure and is coupled to the first electrode. The second unipolar selector is configured to allow current to flow through the MTJ device along a second direction opposite the first direction.
US Patent 11107859 Memory cell with unipolar selectors
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