Patent attributes
Provided is a three dimensional integrated circuit (3DIC) structure including a first die, a second die, and a hybrid bonding structure bonding the first die and the second die. The hybrid bonding structure includes a first bonding structure and a second bonding structure. The first bonding structure includes a first bonding dielectric layer and a first bonding metal layer. The first bonding metal layer is disposed in the first bonding dielectric layer. The first bonding metal layer includes a first via plug and a first metal feature disposed over the first via plug, wherein a height of the first metal feature is greater than or equal to a height of the first via plug. A method of fabricating the 3DIC structure is also provided.