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US Patent 11139034 Data-based polarity write operations

Patent 11139034 was granted and assigned to Micron Technology on October, 2021 by the United States Patent and Trademark Office.

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Is a
Patent
Patent

Patent attributes

Patent Applicant
Micron Technology
Micron Technology
Current Assignee
Micron Technology
Micron Technology
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11139034
Date of Patent
October 5, 2021
Patent Application Number
20200715
Date Filed
July 15, 2020
Patent Citations Received
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US Patent 12106803 Multi-step pre-read for write operations in memory devices
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US Patent 11880571 Counter-based methods and systems for accessing memory cells
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US Patent 12080359 Identify the programming mode of memory cells during reading of the memory cells
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US Patent 11514983 Identify the programming mode of memory cells based on cell statistics obtained during reading of the memory cells
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US Patent 11664073 Adaptively programming memory cells in different modes to optimize performance
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US Patent 11664074 Programming intermediate state to store data in self-selecting memory cells
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US Patent 11694747 Self-selecting memory cells configured to store more than one bit per memory cell
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US Patent 11367484 Multi-step pre-read for write operations in memory devices
Patent abstract

Methods, systems, and devices for data-based polarity write operations are described. A write command may cause a set of data to be written to a set of memory cells. To write the set of data, a write operation that applies voltages across the memory cells based on a logic state of data to be written to the memory cells may be used. During a first interval of the write operation, a voltage may be applied across a memory cell based on a logic state of a data bit to be written to the memory cell. During a second interval of the write operation, a voltage may be applied across the memory cell based on an amount of charge conducted by the memory cell during the first interval.

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