Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
November 9, 2021
0Patent Application Number
202006010
Date Filed
June 1, 2020
0Patent Primary Examiner
Patent abstract
A method of forming a gate dielectric material includes forming a high-K dielectric material in a first region over a substrate, where forming the high-K dielectric material includes forming a first dielectric layer comprising hafnium over the substrate, and forming a second dielectric layer comprising lanthanum over the first dielectric layer.
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