Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tao Wang0
Date of Patent
November 16, 2021
0Patent Application Number
168062450
Date Filed
March 2, 2020
0Patent Primary Examiner
Patent abstract
A magnetic memory device is provided. The magnetic memory device includes a bit line, a first word line, a source line, and a memory cell. The memory cell includes a first switch transistor and a magnetic tunnel junction. A first side of the magnetic tunnel junction is connected to a first terminal of the first switch transistor. The bit line is connected to a second terminal of the first switch transistor. The source line is connected to a second side of the magnetic tunnel junction. The first word line is connected to a third terminal of the first switch transistor.
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