US Patent 11176980 Magnetic memory and formation method thereof

A magnetic memory device is provided. The magnetic memory device includes a bit line, a first word line, a source line, and a memory cell. The memory cell includes a first switch transistor and a magnetic tunnel junction. A first side of the magnetic tunnel junction is connected to a first terminal of the first switch transistor. The bit line is connected to a second terminal of the first switch transistor. The source line is connected to a second side of the magnetic tunnel junction. The first word line is connected to a third terminal of the first switch transistor.