Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 23, 2021
Patent Application Number
17096006
Date Filed
November 12, 2020
Patent Primary Examiner
Patent abstract
A method for manufacturing a transistor device includes a field oxide layer isolates an active region of a core device region from an active region of an input/output device region on a semiconductor substrate, the active region of the core device region is exposed by means of a mask layer, a gate-all-around structure is formed in the active region of the core device region, and a fin gate structure is formed in the active region of the input/output device region, thereby the on-current and off-current performance of the input/output device is not affected when the short channel effect of the core device is improved.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
