US Patent 11183428 Method for manufacturing transistor device

A method for manufacturing a transistor device includes a field oxide layer isolates an active region of a core device region from an active region of an input/output device region on a semiconductor substrate, the active region of the core device region is exposed by means of a mask layer, a gate-all-around structure is formed in the active region of the core device region, and a fin gate structure is formed in the active region of the input/output device region, thereby the on-current and off-current performance of the input/output device is not affected when the short channel effect of the core device is improved.