Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yi-Chun Lin0
Alexander Kalnitsky0
Jia-Rui Lee0
Kuo-Ming Wu0
Date of Patent
November 30, 2021
Patent Application Number
16709323
Date Filed
December 10, 2019
Patent Primary Examiner
Patent abstract
A semiconductor device and a method of forming the same are provided. The semiconductor device includes a transistor and a diode. The transistor includes a first gate region electrically coupled to a gate driver, and a first source region and a first drain region on two sides of the first gate region. The diode includes two terminals coupled between the first drain region of the transistor and a reference voltage. The transistor has a threshold voltage greater than that of the diode.
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