US Patent 11189613 Semiconductor device

Patent 11189613 was granted and assigned to Taiwan Semiconductor Manufacturing Company on November, 2021 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

All edits

Edits on 12 Dec, 2023

"Add patent abstract"

Golden AI

edited on 12 Dec, 2023

Edits made to:

Article (+503 characters)

Article

Patent abstract

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a transistor and a diode. The transistor includes a first gate region electrically coupled to a gate driver, and a first source region and a first drain region on two sides of the first gate region. The diode includes two terminals coupled between the first drain region of the transistor and a reference voltage. The transistor has a threshold voltage greater than that of the diode.

Edits on 10 Oct, 2023

"Add patent inventor(s)"

Golden AI

edited on 10 Oct, 2023

Edits made to:

Infobox (+4 properties)

Infobox

Patent Inventor Names

Alexander Kalnitsky0

Jia-Rui Lee0

Kuo-Ming Wu0

Yi-Chun Lin0