Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wei Xu0
Hongbin Zhu0
Juan Tang0
Date of Patent
December 21, 2021
0Patent Application Number
165766410
Date Filed
September 19, 2019
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, and a slit structure. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The slit structure extends vertically through the memory stack. An upper end of the slit structure is above an upper end of the channel structure.
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