Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sankuei Lin0
Ching-Mei Hsu0
Gaurav Thareja0
Nitin K. Ingle0
Ajay Bhatnagar0
Anchuan Wang0
Ashish Pal0
Date of Patent
December 28, 2021
Patent Application Number
16277104
Date Filed
February 15, 2019
Patent Citations Received
Patent Primary Examiner
Patent abstract
Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.
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