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US Patent 11264345 Conductive barrier direct hybrid bonding
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Patent
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Date Filed
April 12, 2019
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Date of Patent
March 1, 2022
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Patent Application Number
16383455
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Patent Citations
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US Patent 10147641 3D IC method and device
US Patent 10224241 Copper interconnect structure with manganese oxide barrier layer
US Patent 10269756 Die processing
US Patent 10276619 Semiconductor device structure with a conductive feature passing through a passivation layer
US Patent 10276909 Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein
US Patent 10325806 Copper interconnect structure with manganese oxide barrier layer
US Patent 11011418 3D IC method and device
US Patent 10446456 Integrated circuits protected by substrates with cavities, and methods of manufacture
US Patent 11069734 Image sensor device
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Patent Citations Received
US Patent 11973045 Semiconductor structure and method for forming same
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US Patent 11961820 Method for producing a connection between component parts, and component made of component parts
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Patent Inventor Names
Paul M. Enquist
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11264345
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Patent Primary Examiner
Michelle Mandala
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