Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hsin-Yi Lee0
Ching-Hwanq Su0
Da-Yuan Lee0
Ya-Huei Li0
Date of Patent
March 29, 2022
0Patent Application Number
163989220
Date Filed
April 30, 2019
0Patent Citations
...
Patent Citations Received
Patent Primary Examiner
A method includes forming a gate dielectric comprising a portion extending on a semiconductor region, forming a barrier layer comprising a portion extending over the portion of the gate dielectric, forming a work function tuning layer comprising a portion over the portion of the barrier layer, doping a doping element into the work function tuning layer, removing the portion of the work function tuning layer, thinning the portion of the barrier layer, and forming a work function layer over the portion of the barrier layer.
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