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US Patent 11289650 Stacked access device and resistive memory

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
March 4, 2019
Date of Patent
March 29, 2022
Patent Application Number
16291177
Patent Citations
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US Patent 10153432 Resistive random access memory structure and manufacturing method thereof
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US Patent 10164182 Switching layer scheme to enhance RRAM performance
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US Patent 10193065 High K scheme to improve retention performance of resistive random access memory (RRAM)
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US Patent 10276485 Method for forming a homogeneous bottom electrode via (BEVA) top surface for memory
0
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US Patent 10276779 Top electrode cap structure for embedded memory
0
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US Patent 10283700 Semiconductor memory structure with magnetic tunnel junction (MTJ) cell
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US Patent 10340450 Resistive random access memory structure and forming method thereof
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US Patent 10361367 Resistive memory crossbar array with top electrode inner spacers
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US Patent 10410717 Resistive random access memory device with three-dimensional cross-point structure and method of operating the same
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US Patent 10411070 Semiconductor memory device including a selection element pattern confined to a hole
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•••
Patent Inventor Names
Takashi Ando
0
Gloria W. Y. Fraczak
0
Hiroyuki Miyazoe
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Kumar R. Virwani
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11289650
Patent Primary Examiner
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Jay C Kim
CPC Code
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H01L 45/08
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H01L 45/1233
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H01L 45/16
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H01L 27/2463
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H01L 45/141
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H01L 45/1266
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H01L 45/1675
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H01L 27/2427

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