Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ting-Ting Chen0
Chen-Han Wang0
Keng-Chu Lin0
Shuen-Shin Liang0
Tetsuji Ueno0
Date of Patent
April 5, 2022
Patent Application Number
16937344
Date Filed
July 23, 2020
Patent Citations Received
Patent Primary Examiner
The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.
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