US Patent 11302794 FinFET with dual work function metal

An embodiment of the invention may include a method for of forming a semiconductor device and the resulting device. The method may include forming a gate dielectric on a gate region of a substrate. The method may include forming an inner dummy gate on a first portion of the gate dielectric. The method may include forming an outer dummy gate adjacent to the inner dummy gate on a second portion of the gate dielectric. The method may include forming spacers adjacent to the outer dummy gate. The method may include removing the outer dummy gate and depositing a first work function metal. The method may include removing the inner dummy gate and depositing a second work function metal.