US Patent 11302820 Localized protection layer for laser annealing process

A method of forming a semiconductor device includes forming source/drain contact openings extending through at least one dielectric layer to expose source/drain contact regions of source/drain structures. The method further includes depositing a light blocking layer along sidewalls and bottom surfaces of the source/drain contact openings and a topmost surface of the at least one dielectric layer. The method further includes performing a laser annealing process to activate dopants in the source/drain contact region. The method further includes forming source/drain contact structures within source/drain contact openings.