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US Patent 11322578 Semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
October 2, 2019
Date of Patent
May 3, 2022
Patent Applicant
Samsung
Samsung
Patent Application Number
16590565
Patent Citations
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US Patent 10128327 DRAM interconnect structure having ferroelectric capacitors exhibiting negative capacitance
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US Patent 11063112 DRAM interconnect structure having ferroelectric capacitors exhibiting negative capacitance
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US Patent 10153155 Doped ferroelectric hafnium oxide film devices
Patent Citations Received
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US Patent 11621339 Semiconductor device including capacitor
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US Patent 11764283 Semiconductor device including capacitor
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11322578
Patent Primary Examiner
‌
Bac H Au
CPC Code
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H01L 21/02181
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H01L 21/02189
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H01L 21/02172
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H01L 27/11502
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H01L 28/56
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H01L 27/10855
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H01L 27/10808
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H01L 27/10805
‌
H01L 27/10847
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H01L 27/11507
•••

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