Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chao-Hsuan Chen0
Yuan-Sheng Huang0
Date of Patent
May 31, 2022
Patent Application Number
17073847
Date Filed
October 19, 2020
Patent Citations
Patent Primary Examiner
A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.
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