US Patent 11349028 Semiconductor device with gate cut structure

A semiconductor device comprising a substrate with a first fin and a second fin disposed on the substrate. A gate electrode is over the first fin and the second fin. A gate-cut pedestal is positioned between the first fin and the second fin, the gate-cut pedestal having side surfaces and a top surface. A portion of the side surfaces of the gate-cut pedestal is covered by the gate electrode. The gate-cut pedestal has a height that is substantially similar to a height of the first fin or the second fin.