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US Patent 11355587 Source/drain EPI structure for device boost

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
November 30, 2020
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Date of Patent
June 7, 2022
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Patent Application Number
17106389
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Patent Citations
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US Patent 10468500 FinFET fabrication methods
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US Patent 10396156 Method for FinFET LDD doping
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US Patent 10522359 FinFET device and method of forming
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US Patent 10164048 Method for forming source/drain contacts
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US Patent 10347762 Field effect transistor contact with reduced contact resistance using implantation process
Patent Inventor Names
Shahaji B. More
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11355587
0
Patent Primary Examiner
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Ali Naraghi
0

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