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US Patent 11362187 Semiconductor devices including capping layer
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Patent
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Date Filed
November 17, 2020
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Date of Patent
June 14, 2022
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Patent Applicant
Samsung
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Patent Application Number
16950104
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Patent Citations
US Patent 10128241 Integrated circuit devices
US Patent 10211103 Advanced structure for self-aligned contact and method for producing the same
US Patent 10154437 Listen-before-talk reservation scheme for wireless communications over unlicensed spectrum
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US Patent 10243059 Source/drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins
US Patent 10249379 One-time programmable devices having program selector for electrical fuses with extended area
US Patent 10314077 Gating scheme for wireless communication over unlicensed spectrum
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US Patent 10032886 Semiconductor device
Patent Inventor Names
Jinwoo Kim
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Juyoun Kim
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Kyuman Hwang
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11362187
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Patent Primary Examiner
Theresa T Doan
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CPC Code
H01L 29/66545
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H01L 29/0847
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H01L 21/28123
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H01L 29/42376
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H01L 29/78
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H01L 29/0649
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H01L 29/42364
0
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