US Patent 11367651 Semiconductor device
Patent 11367651 was granted and assigned to Samsung on June, 2022 by the United States Patent and Trademark Office.
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Edits on 16 Oct, 2023
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Patent Inventor Names
Chung Hwan Shin0
Do Sun Lee0
Joon Gon Lee0
Nam Gyu Cho0
Rak Hwan Kim0
Won Keun Chung0
Edits on 2 Apr, 2023
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
113676510
Date of Patent
June 21, 2022
0Patent Application Number
169029230
Date Filed
June 16, 2020
0Patent Citations
Patent Primary Examiner
Edits on 28 Mar, 2023
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Edits on 22 Jun, 2022
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Article (+522 characters)
US Patent 11367651 Semiconductor device
Article
A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
11367651
Date of patent
June 21, 2022
Patent application number
16902923
Date Filed
June 16, 2020
Patent citations
Patent primary examiner
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