US Patent 11380645 Semiconductor structure comprising at least one system-on-integrated-circuit component
Patent 11380645 was granted and assigned to Taiwan Semiconductor Manufacturing Company on July, 2022 by the United States Patent and Trademark Office.
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US Patent 11380645 Semiconductor structure comprising at least one system-on-integrated-circuit component
A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.
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