US Patent 11387362 Semiconductor device and manufacturing method thereof
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Patent Inventor Names
Georgios Vellianitis0
Gerben Doornbos0
Marcus Van Dal0
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US Patent 11387362 Semiconductor device and manufacturing method thereof
Article
A semiconductor device includes a gate-all-around field effect transistor (GAA FET). The GAA FET includes channel regions made of a first semiconductor material disposed over a bottom fin layer made of a second semiconductor material, and a source/drain region made of a third semiconductor material. The first semiconductor material is Si
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Patent number
11387362
Date of patent
July 12, 2022
Patent application number
16426634
Date Filed
May 30, 2019
Patent primary examiner
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