Golden has been acquired by ComplyAdvantage.Read about it here ⟶

‌

US Patent 11404322 Method of manufacturing a semiconductor device

Overview Structured Data Issues Contributors Activity

Is a

0

Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

0

Patent Number

Patent Inventor Names

Chandrashekhar Prakash Savant0

Yu-Ming Lin0

Ming-Hsi Yeh0

Kuo-Feng Yu0

Clement Hsingjen Wann0

Chun Hsiung Tsai0

Chih-Hsin Ko0

Shahaji B. More0

Date of Patent

August 2, 2022

0

Patent Application Number

171680470

Date Filed

February 4, 2021

0

Patent Citations

US Patent 10453684 Method for patterning a material layer with desired dimensions

Patent Citations Received

US Patent 11972982 Method of manufacturing a semiconductor device

0

Patent Primary Examiner

0

CPC Code

0

0

0

0

0

In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Timeline

No Timeline data yet.

Further Resources

Title

Author

Link

Type

Date

No Further Resources data yet.

References

Find more entities like US Patent 11404322 Method of manufacturing a semiconductor device

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Golden Query Tool