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US Patent 11972982 Method of manufacturing a semiconductor device

Patent 11972982 was granted and assigned to Taiwan Semiconductor Manufacturing Company on April, 2024 by the United States Patent and Trademark Office.

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Patent attributes

Patent Applicant

Taiwan Semiconductor Manufacturing Company

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Current Assignee

Taiwan Semiconductor Manufacturing Company

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Clement Hsingjen Wann0

Chandrashekhar Prakash Savant0

Yu-Ming Lin0

Ming-Hsi Yeh0

Chun Hsiung Tsai0

Shahaji B. More0

Chih-Hsin Ko0

Kuo-Feng Yu0

Date of Patent

April 30, 2024

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Patent Application Number

178653110

Date Filed

July 14, 2022

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Patent Citations

US Patent 10453684 Method for patterning a material layer with desired dimensions

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US Patent 10026829 Semiconductor device with isolated body portion

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US Patent 11404322 Method of manufacturing a semiconductor device

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Patent Primary Examiner

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Patent abstract

In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

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