US Patent 11972982 Method of manufacturing a semiconductor device
Patent 11972982 was granted and assigned to Taiwan Semiconductor Manufacturing Company on April, 2024 by the United States Patent and Trademark Office.
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US Patent 11972982 Method of manufacturing a semiconductor device
Article
Patent abstract
In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chandrashekhar Prakash Savant0
Chih-Hsin Ko0
Chun Hsiung Tsai0
Clement Hsingjen Wann0
Kuo-Feng Yu0
Ming-Hsi Yeh0
Shahaji B. More0
Yu-Ming Lin0
Date of Patent
April 30, 2024
0Patent Application Number
178653110
Date Filed
July 14, 2022
0Patent Citations
Patent Primary Examiner
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