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US Patent 11404884 Pulsed level shift and inverter circuits for GaN devices

Patent 11404884 was granted and assigned to Navitas Semiconductor Corporation on August, 2022 by the United States Patent and Trademark Office.

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Patent attributes

Patent Applicant

Current Assignee

Navitas Semiconductor Corporation

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Date of Patent

August 2, 2022

Patent Application Number

16699081

Date Filed

November 28, 2019

Patent Citations

US Patent 10135275 Pulsed level shift and inverter circuits for GaN devices

US Patent 10170922 GaN circuit drivers for GaN circuit loads

US Patent 10269687 Electronic packages for flip chip devices

US Patent 10277048 Half bridge power conversion circuits using GaN devices

US Patent 10396579 GaN circuit drivers for GaN circuit loads

US Patent 10333327 Bootstrap capacitor charging circuit for GaN devices

US Patent 10530169 Pulsed level shift and inverter circuits for GaN devices

US Patent 10536140 Half bridge and oscillator power integrated circuit

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Patent Citations Received

US Patent 11888332 Half-bridge circuit using monolithic flip-chip GaN power devices

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US Patent 11605955 Half-bridge circuit using GaN power devices

US Patent 11757290 Half-bridge circuit using flip-chip GaN power devices

US Patent 11770010 Half-bridge circuit using separately packaged GaN power devices

US Patent 11862996 Pulsed level shift and inverter circuits for GaN devices

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US Patent 11545838 Half-bridge circuit using separately packaged GaN power devices

Patent Primary Examiner

Jeffrey A Gblende

GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

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