US Patent 11410740 Multi-fuse memory cell circuit and method
Patent 11410740 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2022 by the United States Patent and Trademark Office.
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US Patent 11410740 Multi-fuse memory cell circuit and method
A multi-fuse memory cell is disclosed. The circuit includes: a first fuse element electrically coupled to a first transistor, a gate of the first transistor is electrically coupled to a first selection signal; a second fuse element electrically coupled to a second transistor, a gate of the second transistor is electrically coupled to a second selection signal, both the first transistor and the second transistor are grounded; and a programming transistor electrically coupled to the first fuse element and the second fuse element, wherein a gate of the programming transistor is electrically coupled to a programming signal.
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