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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 20, 2022
0Patent Application Number
163031250
Date Filed
July 2, 2016
0Patent Primary Examiner
An apparatus including a transistor device including a channel including germanium disposed on a substrate; a buffer layer disposed on the substrate between the channel and the substrate, wherein the buffer layer includes silicon germanium; and a seed layer disposed on the substrate between the buffer layer and the substrate, wherein the seed layer includes germanium. A method including forming seed layer on a silicon substrate, wherein the seed layer includes germanium; forming a buffer layer on the seed layer, wherein the buffer layer includes silicon germanium; and forming a transistor device including a channel on the buffer layer.
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