Is a
Patent attributes
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shih-Hsien Huang0
Huai-Tzu Chiang0
Sheng-Hao Lin0
Yu-Ru Yang0
Cheng-Tzung Tsai0
Chien-Hung Chen0
Chun-Yuan Wu0
Hao-Ming Lee0
Date of Patent
September 4, 2018
0Patent Application Number
149363700
Date Filed
November 9, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Provided is a FinFET including a substrate, at least one fin and at least one gate. A portion of the at least one fin is embedded in the substrate. The at least one fin includes, from bottom to top, a seed layer, a stress relaxation layer and a channel layer. The at least one gate is across the at least one fin. A method of forming a FinFET is further provided.
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