Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 6, 2023
0Patent Application Number
173365650
Date Filed
June 2, 2021
0Patent Citations
Patent Primary Examiner
An apparatus is described. The apparatus includes a FINFET device having a channel. The channel is composed of a first semiconductor material that is epitaxially grown on a subfin structure beneath the channel. The subfin structure is composed of a second semiconductor material that is different than the first semiconductor material. The subfin structure is epitaxially grown on a substrate composed of a third semiconductor material that is different than the first and second semiconductor materials. The subfin structure has a doped region to substantially impede leakage currents between the channel and the substrate.
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