Patent 11482548 was granted and assigned to Sony Semiconductor Solutions Corporation on October, 2022 by the United States Patent and Trademark Office.
Provided is a semiconductor device having a structure suitable for higher integration. The semiconductor device includes a transistor that includes a gate section, a first diffusion layer, and a second diffusion layer. The semiconductor device further includes a first electrically-conductive section a second electrically-conductive section that is electrically insulated from the first electrically-conductive section, a first storage element that is located between the first diffusion layer and the first electrically-conductive section and is electrically coupled to each of the first diffusion layer and the first electrically-conductive section, and a second storage element that is located between the second diffusion layer and the second electrically-conductive section and is electrically coupled to each of the second diffusion layer and the second electrically-conductive section.