Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Lin-Yu Huang0
Chih-Hao Wang0
Huan-Chieh Su0
Li-Zhen Yu0
Cheng-Chi Chuang0
Date of Patent
October 25, 2022
0Patent Application Number
171593090
Date Filed
January 27, 2021
0Patent Citations
Patent Primary Examiner
A semiconductor structure includes one or more channel layers; a gate structure engaging the one or more channel layers; a first source/drain feature connected to a first side of the one or more channel layers and adjacent to the gate structure; a first dielectric cap disposed over the first source/drain feature, wherein a bottom surface of the first dielectric cap is below a top surface of the gate structure; a via disposed under and electrically connected to the first source/drain feature; and a power rail disposed under and electrically connected to the via.
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