US Patent 11508783 Method for fabricating memory device
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Patent Inventor Names
Chung-Tse Chen0
Ko-Chi Chen0
Tzu-Yun Chang0
Edits on 22 Apr, 2023
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Edits on 25 Nov, 2022
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US Patent 11508783 Method for fabricating memory device
Article
A method for fabricating memory device is provided. The method includes forming a transistor on a substrate. Further, a contact structure is formed on a source/drain region of the transistor. A conductive layer is formed on the contact structure. Four memory structures are formed on the conductive layer to form a quadrilateral structure.
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Patent Applicant
Patent Jurisdiction
Patent Number
115087830
Date of Patent
November 22, 2022
0Patent Application Number
172357850
Date Filed
April 20, 2021
0Patent Citations
Patent Primary Examiner
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